High-power highly reliable 1.06 µm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers
- 17 April 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (8) , 661-662
- https://doi.org/10.1049/el:20030455
Abstract
No abstract availableKeywords
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