Atomic scale characterization of a-Si : H/a-SiC : H interface structures
- 1 December 1997
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 49 (1-4) , 45-51
- https://doi.org/10.1016/s0927-0248(97)00174-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Real time observations of surface reactions during a-Si:H deposition or H2 plasma annealing by using FT-IR-ATRJournal of Non-Crystalline Solids, 1996
- Insights into deposition processes for amorphous semiconductor materials and devices from real time spectroscopic ellipsometryJournal of Non-Crystalline Solids, 1996
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor DepositionJapanese Journal of Applied Physics, 1995
- Real-Time Monitoring of Surface Reactions during Plasma-Enhanced CVD of SiliconJapanese Journal of Applied Physics, 1995
- In situ ellipsometric study of amorphous silicon/amorphous silicon-carbon interfacesJournal of Applied Physics, 1991
- Real-time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopyApplied Physics Letters, 1990
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Infrared ellipsometry study of the vibrational properties and the growth of hydrogenated amorphous silicon ultrathin filmsJournal of Applied Physics, 1988
- Phonons in polysilane alloysPhysical Review B, 1982
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979