The direct-indirect transition in In1−xGaxP
- 15 September 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 15 (6) , 981-985
- https://doi.org/10.1016/0038-1098(74)90514-6
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Crystal and luminescence properties of constant-temperature liquid-phase-expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)Journal of Applied Physics, 1973
- Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solutionJournal of Applied Physics, 1973
- Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction ElectroluminescenceJournal of the Electrochemical Society, 1973
- Liquid phase epitaxial growth of GaxIn1−xPJournal of Electronic Materials, 1972
- Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inPhysical Review B, 1972
- Optically Pumped In1−xGax P Platelet Lasers from the Infrared to the Yellow (8900−5800 Å, 77°K)Journal of Applied Physics, 1972
- Photoluminescence Processes inat 2°KPhysical Review B, 1971
- Electronic Structure and Luminescence Processes in In1−xGaxP AlloysJournal of Applied Physics, 1971
- The preparation and properties of vapor-grown In1−xGax PMetallurgical Transactions, 1971
- Band Structure of InGaP from Pressure ExperimentsJournal of Applied Physics, 1970