Cyclotron and plasmon emission from two-dimensional electrons in GaAs
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3) , 118-123
- https://doi.org/10.1016/0039-6028(82)90571-4
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Far infrared emission from 2D electrons at the GaAsAlxGa1-xAs interfaceSolid State Communications, 1981
- Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlatticesApplied Physics Letters, 1981
- Far infrared emission from plasma oscillations of Si inversion layersSolid State Communications, 1980
- Emission spectroscopy on two-dimensional systemsSurface Science, 1980
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Shubnikov—de Haas Oscillations in a Semiconductor SuperlatticePhysical Review Letters, 1977
- Interface excitations in metal-insulator-semiconductor structuresPhysical Review B, 1975
- Theory of Surface Waves Coupled to Surface CarriersJournal of the Physics Society Japan, 1974
- Plasma Losses by Fast Electrons in Thin FilmsPhysical Review B, 1957