Stability and noise of PdGeAgAu ohmic contacts to InGaAsInAlAs high electron mobility transistors
- 11 February 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (2) , 225-229
- https://doi.org/10.1016/0038-1101(95)00132-8
Abstract
No abstract availableKeywords
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