Single quantum well transistor with modulation doped AlGaAs/GaAs/AlGaAs structures
- 31 December 1985
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 1 (1) , 43-47
- https://doi.org/10.1016/0749-6036(85)90027-8
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Mitsubishi Foundation
This publication has 8 references indexed in Scilit:
- A Proposal of Single Quantum Well Transistor (SQWT) –Self-Consistent Calculations of 2D Electrons in a Quantum Well with External VoltageJapanese Journal of Applied Physics, 1984
- Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1983
- Electron density of the two-dimensional electron gas in modulation doped layersJournal of Applied Physics, 1983
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering SpectraJournal of the Physics Society Japan, 1982
- Velocity-Modulation Transistor (VMT) –A New Field-Effect Transistor ConceptJapanese Journal of Applied Physics, 1982
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972