Radiative recombination in MBE-prepared epitaxial Si and Si1-xGex layers
- 31 July 1991
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 79 (2) , 161-165
- https://doi.org/10.1016/0038-1098(91)90082-7
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Photoluminescence studies of Si (100) doped with low-energy (100–1000 eV) B+ ions during molecular beam epitaxyApplied Physics Letters, 1990
- Photoluminescence studies of Si (100) doped with low-energy (≤1000 eV) As+ ions during molecular beam epitaxyApplied Physics Letters, 1989
- Heterojunction bipolar transistors using Si-Ge alloysIEEE Transactions on Electron Devices, 1989
- Photoluminescence from MBE Si grown at low temperatures; donor bound excitons and decorated dislocationsSemiconductor Science and Technology, 1989
- Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogenApplied Physics Letters, 1985
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Drift and Diffusion of Free Excitons in SiPhysical Review Letters, 1980
- A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and TlJournal of Luminescence, 1977
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967