Solutions to heavy ion induced avalanche burnout in power devices
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 16, 133-137
- https://doi.org/10.1109/radecs.1991.213594
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- SiC power devices — Present status, applications and future perspectivePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Single-event burnout of power bipolar junction transistorsIEEE Transactions on Nuclear Science, 1991
- Heavy-Ion-Induced, Gate-Rupture in Power MOSFETsIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986
- Current Induced Avalanche in Epitaxial StructuresIEEE Transactions on Nuclear Science, 1985
- Current gain and cutoff frequency falloff at high currentsIEEE Transactions on Electron Devices, 1969
- Diffused Emitter and Base Silicon Transistors*Bell System Technical Journal, 1956