Molecular beam epitaxy growth of 1.3 µm high-reflectivityAlGaAsSb/AlAsSb Bragg mirror
- 3 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (14) , 1227-1228
- https://doi.org/10.1049/el:19970830
Abstract
The first high reflectivity (R = 97.7%) Al0.3Ga0.7As0.5Sb0.5/AlAs0.59Sb0.41 Bragg mirror lattice matched to InP was obtained at 1.28 µm by solid source molecular beam epitaxy. This result was achieved with only 15.5 periods in the stack. A comparison between the calculated and the measured Bragg mirror reflectivities shows a near perfect agreement.Keywords
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