Strain Effects on the Band Structure of Si/Si1–xGex (001) Superlattices

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Abstract
The electronic structure of strained layer Si/Si1–xGex superlattices is calculated by means of the empirical tight‐binding method. The influence of strain on band structure is treated by applying interatomic interaction parameters depending on bond lengths and bond angles. Strain effects on band discontinuities are studied. A strain induced type I‐type II transition in Si/Si0.5Ge0.5 superlattices on substrates with different lattice constants is obtained. Threshold energies and oscillator strengths of optical band‐to‐band transitions are reported for short period SinGen superlattices grown on Si1‐yGey in dependence on n and y.