Determination of strain in MBE (In, Ga)As films grown on GaAs(100) substrate by ion channeling
- 1 March 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 30 (2) , 219-222
- https://doi.org/10.1016/0168-583x(88)90122-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Steering effect at a strained NiSi2/Si (001) interfaceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Ion channeling effect of In dopant in semi-insulating GaAsApplied Physics Letters, 1986
- Channeling studies of InGaAs ternary alloys and InGaAs/InP superlattices grown by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Structural study of GaSb/AlSb strained-layer superlatticePhysical Review B, 1985
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)Journal of Applied Physics, 1984
- Extended x-ray-absorption fine-structure study ofrandom solid solutionsPhysical Review B, 1983
- Strain measurements by channeling angular scansApplied Physics Letters, 1983