Effect of annealing on the Richardson constant of Al-GaAs Schottky diodes
- 30 November 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (11) , 1049-1052
- https://doi.org/10.1016/0038-1101(81)90133-7
Abstract
No abstract availableKeywords
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