1.5 μm to 0.87 μm optical upconversion using wafer fusion technology

Wafer fusion is an important processing tool for heterogenous integration of different materials regardless of their lattice constants. It removes the limitation of conventional epitaxial growth techniques and introduces a design parameter for achieving high performance semiconductor devices. In this article, we propose and demonstrate a 1.5 μm to 0.87 μm optical upconversion device based on wafer fusion technology. The device consists of an ${\mathrm{In}}_{\text{0.53}}{\mathrm{Ga}}_{\text{0.47}}\mathrm{As}$ (InGaAs) p-i-n photodetector and an AlGaAs/GaAs light-emitting diode (LED) integrated with wafer fusion. Incoming 1.5 μm light is absorbed by the InGaAs photodetector and generates a photocurrent. The resultant photocurrent drives the GaAs LED, which emits radiation at 0.87 μm. An internal quantum efficiency of 20% and an external quantum efficiency of 0.27% was obtained at room temperature. The results show the potential of the upconversion device in near-infrared imaging applications.