Determination of the diffusing species and mechanism of diffusion during CrSi2 formation, using 31Si as a marker

Abstract
Both the diffusing atomic species and its mechanism of diffusion have been directly determined during metal‐silicon interaction to form CrSi2. By using radioactive 31Si (half‐life = 2.62h) as a marker, it has been shown that silicon is the diffusing species during CrSi2 formation and that it diffuses by a substitutional (vacancy) mechanism. Complete intermixing of radioactive 31Si and nonradioactive silicon was found to take place throughout the silicide layer at its formation temperature, due to high substitutional (vacancy) self‐diffusion of silicon in CrSi2.