Determination of the diffusing species and mechanism of diffusion during CrSi2 formation, using 31Si as a marker
- 1 March 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (5) , 412-414
- https://doi.org/10.1063/1.93122
Abstract
Both the diffusing atomic species and its mechanism of diffusion have been directly determined during metal‐silicon interaction to form CrSi2. By using radioactive 31Si (half‐life = 2.62h) as a marker, it has been shown that silicon is the diffusing species during CrSi2 formation and that it diffuses by a substitutional (vacancy) mechanism. Complete intermixing of radioactive 31Si and nonradioactive silicon was found to take place throughout the silicide layer at its formation temperature, due to high substitutional (vacancy) self‐diffusion of silicon in CrSi2.Keywords
This publication has 16 references indexed in Scilit:
- An interface — marker technique applied to the study of metal silicide growthNuclear Instruments and Methods, 1980
- Metallurgical and electrical properties of chromium silicon interfacesSolid-State Electronics, 1980
- An alternative marker experiment in the formation of Mo and W silicidesApplied Physics Letters, 1978
- Interactions in the Co/Si thin-film system. II. Diffusion-marker experimentsJournal of Applied Physics, 1978
- Tungsten as a marker in thin-film diffusion studiesApplied Physics Letters, 1976
- Iron silicide thin film formation at low temperaturesThin Solid Films, 1975
- Structure and growth kinetics of Ni2Si on siliconThin Solid Films, 1975
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975
- Identification of the dominant diffusing species in silicide formationApplied Physics Letters, 1974
- Kinetics and mechanism of platinum silicide formation on siliconApplied Physics Letters, 1974