Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N2O

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Abstract
A new technique, namely the combination of a gate electrode deposited using amorphous-Si and a gate oxide grown in N2O, is proposed and shown to improve the hot-electron hardness in metal-oxide-semiconductor (MOS) devices. It is found experimentally that MOS capacitors fabricated using this technique exhibit excellent charge-to-breakdown performance. The number of hot-electron-induced interface traps and the flat-band voltage shift are also reduced. The hardness improvement can be explained using a mechanism based on the increase in compressive stress in the oxide, the suppression of hydrogen effects, and the relaxation of SiO2/Si interfacial strain.