InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication

Abstract
We investigated the inductively coupled plasma etching of InP-based materials for photonic-crystal (PC) device fabrication. By optimizing bias power and gas pressure, circular holes with a diameter of e-beam resist mask. This technique was applied to the fabrication of PC-slab devices, and a single-point-defect PC laser was demonstrated at room temperature.