InP Etching by HI/Xe Inductively Coupled Plasma for Photonic-Crystal Device Fabrication
- 1 January 2006
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 45 (1L) , L102
- https://doi.org/10.1143/jjap.45.l102
Abstract
We investigated the inductively coupled plasma etching of InP-based materials for photonic-crystal (PC) device fabrication. By optimizing bias power and gas pressure, circular holes with a diameter of e-beam resist mask. This technique was applied to the fabrication of PC-slab devices, and a single-point-defect PC laser was demonstrated at room temperature.Keywords
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