Photo-CVD silicon nitride thin layers as pH-ISFET sensitive membrane
- 30 April 1994
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 19 (1-3) , 342-347
- https://doi.org/10.1016/0925-4005(93)00988-b
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Properties of very low temperature plasma deposited silicon nitride filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Infrared Investigation of Ultraviolet‐Light‐Induced Changes of Chemical Bonds in Silicon‐rich Plasma Silicon NitrideJournal of the Electrochemical Society, 1992
- Silicon nitride films deposited by Hg-photosensitization chemical vapor depositionJournal of Non-Crystalline Solids, 1992
- Ion-sensing devices with silicon nitride and borosilicate glass insulatorsIEEE Transactions on Electron Devices, 1987
- Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium LampJapanese Journal of Applied Physics, 1986
- Structural and Electrical Properies of Photo-CVD Silicon Nitride FilmJapanese Journal of Applied Physics, 1984
- Photo-Chemical Vapor Deposition of Silicon Nitride Film by Direct PhotolysisJapanese Journal of Applied Physics, 1983
- The effect of low pressure plasma on Si–SiO2 structures and GaAs substratesJournal of Vacuum Science & Technology B, 1983
- Degradation-Free P-CVD SiN Deposition on GaAs FETsJapanese Journal of Applied Physics, 1983
- ISFET's using inorganic gate thin filmsIEEE Transactions on Electron Devices, 1979