Amorphous phase formation in an as-deposited platinum-GaAs interface
- 29 April 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (17) , 1851-1853
- https://doi.org/10.1063/1.105077
Abstract
The presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples has been investigated via high-resolution electron microscopy, microdiffraction, and energy dispersive spectroscopy. The intermixed layer forms below the native oxide of the GaAs substrate and consists of three elements, platinum, gallium, and arsenic. We suggest that this layer forms during the deposition process of the platinum.Keywords
This publication has 19 references indexed in Scilit:
- Hrem and Nano-Scale Microanalysis of the Titanium-Silicon Interfacial ReactionMRS Proceedings, 1990
- Amorphous phase formation by solid-state reaction between polycrystalline Co thin films and single-crystal GaAsApplied Physics Letters, 1989
- Amorphous silicide formation by thermal reaction: A comparison of several metal–silicon systemsJournal of Vacuum Science & Technology A, 1989
- Phase formation in the Pd-InP systemJournal of Applied Physics, 1988
- High-resolution and in situ tem studies of annealing of Ti-Si multilayersJournal of the Less Common Metals, 1988
- High-Resolution Electron Microscopy and Scanning Tunneling Microscopy of Native Oxides on SiliconScience, 1987
- Ni-InP reaction: Formation of amorphous and crystalline ternary phasesApplied Physics Letters, 1987
- Low temperature reactions at Si/metal interfaces; What is going on at the interfaces?Surface Science Reports, 1983
- Formation of an Amorphous Alloy by Solid-State Reaction of the Pure Polycrystalline MetalsPhysical Review Letters, 1983
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976