InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours

This publication has 14 references indexed in Scilit:

• Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC
  Electronics Letters, 1997
• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
  Japanese Journal of Applied Physics, 1997
• Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors
  Japanese Journal of Applied Physics, 1997
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
  Applied Physics Letters, 1996
• Optical gain and crystal symmetry in III–V nitride lasers
  Applied Physics Letters, 1996
• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
  Japanese Journal of Applied Physics, 1996
• Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
  Japanese Journal of Applied Physics, 1996
• Theoretical study of room temperature optical gain in GaN strained quantum wells
  Applied Physics Letters, 1996
• Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure
  Applied Physics Letters, 1994
• Low-noise AlGaAs lasers grown by organometallic vapor phase epitaxy
  IEEE Journal of Quantum Electronics, 1989