Channeling and RHEED analyses of Pb-implantation in silicon
- 1 February 1978
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 15 (2) , 233-237
- https://doi.org/10.1007/bf00928215
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Crystal orientation dependence of residual disorder in As−implanted SiApplied Physics Letters, 1975
- Influence of implanted dose on the recrystallization of Si amorphous layerApplied Physics Letters, 1975
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO GeApplied Physics Letters, 1968