Transferred-electron domains in In0.53Ga0.47As in dependence on the the nl product
- 1 February 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (2) , 187-189
- https://doi.org/10.1016/0038-1101(84)90110-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fieldsJournal of Electronic Materials, 1982
- Material-selective etching of InP and an InGaAsP alloyJournal of Materials Science, 1982
- Anatomy of the transferred-electron effect in III-V semiconductorsJournal of Applied Physics, 1977
- A two-dimensional numerical FET model for DC, AC, and large-signal analysisIEEE Transactions on Electron Devices, 1973
- Pulse generation in planar Gunn devices with varying nL productElectronics Letters, 1972