Investigation of Ion Implantation Damage with Stress Measurements

This publication has 12 references indexed in Scilit:

• SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE
  Applied Physics Letters, 1971
• RAMAN SCATTERING OF ION-IMPLANTED GaAs
  Applied Physics Letters, 1971
• LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SI
  Applied Physics Letters, 1970
• ION IMPLANTATION DEPTH DISTRIBUTIONS: ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS
  Applied Physics Letters, 1970
• Spatial distribution of energy deposited into atomic processes in ion-implanted silicon
  Radiation Effects, 1970
• The energy dependence and depth distribution of lattice disorder in ion-implanted silicon
  Radiation Effects, 1970
• The distribution of damage produced by ion implantation of silicon at room temperature
  Radiation Effects, 1970
• Damage produced by ion mplantation in silicon
  Radiation Effects, 1970
• X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation
  Physica Status Solidi (b), 1969
• Pulse Height Defect and Energy Dispersion in Semiconductor Detectors
  Review of Scientific Instruments, 1966