Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems

This publication has 17 references indexed in Scilit:

• Fabrication of PbZr_xTi_1-xO₃ Films on Si Structures Using Y₂O₃ Buffer Layers
  Japanese Journal of Applied Physics, 1998
• The role of leakge current on the memory window and memory retention in MFIS structure
  Integrated Ferroelectrics, 1998
• Strontium Bismuth Tantalate Based Ferroelectric Gate Field Effect Transistor with Yttrium Oxide as the Buffer Layer
  MRS Proceedings, 1997
• Effects of rapid thermal process on structural and electrical characteristics of Y2O3 thin films by r.f.-magnetron sputtering
  Thin Solid Films, 1996
• Growth and dielectric characterization of yttrium oxide thin films deposited on Si by r.f.-magnetron sputtering
  Thin Solid Films, 1993
• Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO₂ Layers and Si Substrates
  Japanese Journal of Applied Physics, 1993
• Electrical behaviour of electron-beam-evaporated yttrium oxide thin films on silicon
  Thin Solid Films, 1991
• Yttrium oxide based metal-insulator-semiconductor structures on silicon
  Thin Solid Films, 1989
• Ultra-thin Ta₂O₅dielectric film for high-speed bipolar memories
  IEEE Transactions on Electron Devices, 1987
• The preparation of cross‐section specimens for transmission electron microscopy
  Journal of Electron Microscopy Technique, 1984