The temperature dependence of luminescence intensity on GaAs1-xPx:N
- 16 April 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 70 (2) , 423-431
- https://doi.org/10.1002/pssa.2210700209
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Local-environment effect on the nitrogen bound state inalloys: Experiments and coherent-potential approximation theoryPhysical Review B, 1980
- Photoluminescence in nitrogen-doped gallium arsenide phosphide (GaAs1−xPx : N) for 0.6<x<1Journal of Applied Physics, 1978
- Recombination kinetics of the excitons in GaP:N electroluminescent diodesSolid-State Electronics, 1978
- Nitrogen isoelectronic trap in : II. Model calculation of the electronic states and at low temperaturePhysical Review B, 1977
- Model calculations for radiative recombination in Zn-N-doppedin the direct and indirect composition regionPhysical Review B, 1974
- Radiative recombination mechanisms in GaAsP diodes with and without nitrogen dopingJournal of Applied Physics, 1972