Computer simulation of hot-carrier effects in asymmetric LDD and LDS MOSFET devices
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (11) , 2492-2498
- https://doi.org/10.1109/16.43672
Abstract
No abstract availableKeywords
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