Mechanisms influencing “hot-wire” deposition of hydrogenated amorphous silicon
- 15 August 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (4) , 1909-1917
- https://doi.org/10.1063/1.365998
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Reaction rate constant of Si atoms with SiH4molecules in a RF silane plasmaJournal of Physics D: Applied Physics, 1994
- Factors Influencing the Quality of a-Si:H Films Deposited by the “HOT WIRE” TechniqueMRS Proceedings, 1994
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- Deposition of device quality, low H content a-Si:H by the hot wire techniqueJournal of Non-Crystalline Solids, 1991
- Deposition of a-Si:H by high temperature thermal decomposition of silaneJournal of Non-Crystalline Solids, 1989
- Production of high-quality amorphous silicon films by evaporative silane surface decompositionJournal of Applied Physics, 1988
- Evidence for microstructure in glow discharge hydrogenated amorphous Si-C alloysSolar Cells, 1987
- High Quality Amorphous Silicon Prepared by Catalytic Chemical Vapor Deposition (CTL-CVD) MethodMRS Proceedings, 1987
- Catalytic Chemical Vapor Deposition (CTC–CVD) Method Producing High Quality Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1986
- a-Si : H produced by high-temperature thermal decomposition of silaneJournal of Applied Physics, 1979