Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S)
- https://doi.org/10.1143/jjap.34.812
Abstract
This paper describes specific features in low-temperature drain current and transconductance characteristics of thin silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors (SOI nMOSFET's) with a sub-10-nm-thick silicon layer and presents some simple analyses based on quantum mechanics. It is suggested that these features originate from the two-dimensional subband system in the thin SOI layer and its local deviation based on the local-deviated silicon layer thickness reflecting the buried oxide layer surface morphology of high-temperature-annealed SIMOX substrates.Keywords
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