CMOS-compatible lateral bipolar transistor for BiCMOS technology. II. Experimental results
Open Access
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (8) , 1865-1869
- https://doi.org/10.1109/16.144676
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- CMOS-compatible lateral bipolar transistor for BiCMOS technology. I. ModelingIEEE Transactions on Electron Devices, 1992
- An SOI voltage-controlled bipolar-MOS deviceIEEE Transactions on Electron Devices, 1987
- A lateral silicon-on-insulator bipolar transistor with a self-aligned base contactIEEE Electron Device Letters, 1987
- Bipolar CMOS merged structure for high speed M bit DRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986