Deep-level defects in high-resistivity GaAs grown by the horizontal Bridgman technique

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Abstract
In a horizontal Bridgman (HB) apparatus the authors have grown high-resistivity GaAs. With optical detection of electron spin resonance and optical measurements they detected both charge states of EL2, a Ga antisite-related defect, and the paramagnetic charge state of an oxygen-related defect as the dominant deep-level defects in this material. The latter is probably the off-centre substitutional oxygen defect with negative-U properties recently identified by local vibrational mode measurements. For the first time they observed a new paramagnetic As antisite-related defect besides EL2 in low-resistivity as-grown HB GaAs.