Mass redistribution by atomic mixing in sputter depth profiling
- 31 December 1981
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 9 (1-4) , 335-344
- https://doi.org/10.1016/0378-5963(81)90046-5
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Atomic mixing in ion impact: A collision cascade modelApplied Physics Letters, 1981
- Ion beam mixing in amorphous silicon II. Theoretical interpretationNuclear Instruments and Methods, 1981
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Ion induced silicide formation in niobium thin filmsRadiation Effects, 1980
- The depth resolution of sputter profilingApplied Physics A, 1979
- Ion-induced silicide formation in niobium thin filmsRadiation Effects, 1979
- Ion-beam-induced atomic mixingJournal of Applied Physics, 1977
- Alloying of thin palladium films with single crystal and amorphous siliconPhysica Status Solidi (a), 1973
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTSApplied Physics Letters, 1967