Temperature effects on the highly correlated electron gas of a Si-111(1 × 1) surface
- 1 September 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 47 (11) , 939-941
- https://doi.org/10.1016/0038-1098(83)90126-6
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Temperature dependence of surface electronic structure of Si(111) surfaceSolid State Communications, 1983
- Comparison of the Si(111) (7 × 7) and (1×1)surfacesSolid State Communications, 1982
- Many-body effects in the (111)-silicon dangling-bond surface statesSolid State Communications, 1982
- On the structure of the laser irradiated Si(111)-(1 × 1) surfaceSolid State Communications, 1982
- A new solution to the Anderson-Newns Hamiltonian of chemisorptionSolid State Communications, 1982
- Photoemission study of the surface electronic structure of Si(111) 1 × 1 and Si(111) 7 × 7Surface Science, 1982
- Similarity of the laser- and thermally annealed Si(111) surfacesPhysical Review B, 1981
- Angle-resolved ultraviolet photoemission study of Si(111) 7 × 7 and 1 × 1 surfacesSolid State Communications, 1981
- Perturbation treatment of correlations in transition metalsJournal de Physique, 1980
- Displaced abrupt barrier and self-consistency of dangling-bond surface statesJournal of Physics C: Solid State Physics, 1976