The effects of annealing metal-insulator-semiconductor diodes employing a thermal nitride-InP interface

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Abstract
The interface properties of the thermal nitride film‐InP system and its annealing were investigated. To obtain a uniform thermal nitride on a InP crystal, an improved thermal nitriding technique was developed by introducing in situ HCl vapor etching prior to the thermal nitriding. Two devices [MANS (metal‐alumina‐nitride‐semiconductor) diode and FET (field‐effect‐transistor)] containing a composite gate insulator of a thin nitride film (∼100 Å) and CVD (chemical‐vapor‐deposition)‐Al2O3 film (∼1000 Å) were compared with conventional MAS devices in view of the surface state density (NSS) in the MANS interface at energies near the conduction band edge decreased from 1×1013 to 1×1012/cm2 eV after annealing at 550 °C. A considerable increase in the effective mobility of the MANS‐FET was also seen after annealing. However, further annealing at a temperature higher than 600 °C resulted in a gradual degradation in the interface quality. In contrast, only the MAS interface showed degradation. Discussions are given on the effects of annealing on interface properties of MANS and MAS devices, from the view point of surface passivation.

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