Stacking-Fault Defects in Epitaxial Silicon Layers
- 1 January 1966
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (1) , 441-442
- https://doi.org/10.1063/1.1707865
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon SubstratesJournal of Applied Physics, 1964
- Crystallographic imperfections in siliconDiscussions of the Faraday Society, 1964
- ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICONApplied Physics Letters, 1963
- EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICONApplied Physics Letters, 1963
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- Stacking Faults in Vapor Grown SiliconJournal of the Electrochemical Society, 1963
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962
- Anomalous electron absorption effects in metal foils: theory and comparison with experimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962