High Performance Monolithic Power Amplifier Using a Unique Ion Implantation Process
- 1 January 1986
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 86, 5-7
- https://doi.org/10.1109/mcs.1986.1114469
Abstract
State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in /sup I/DSS and /sup V/PO.Keywords
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