Low-energy nitrogen-ion doping into GaAs and its optical properties

This publication has 14 references indexed in Scilit:

• Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)
  Applied Physics Letters, 1997
• Optical characterization of low-energy nitrogen-ion doped GaAs
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
  Japanese Journal of Applied Physics, 1997
• Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
• Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs
  Applied Physics Letters, 1995
• Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
  Japanese Journal of Applied Physics, 1993
• Nitrogen pair luminescence in GaAs
  Applied Physics Letters, 1990
• Photoluminescence of nitrogen-doped VPE GaAs
  Solid State Communications, 1985
• Toward a Theory of Isoelectronic Impurities in Semiconductors
  Physical Review B, 1968
• Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
  Physical Review B, 1966