Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs]

This publication has 10 references indexed in Scilit:

• Heavy Ton / Proton Test Results On High Integrated Memories
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• Heavy ion test results on memories
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• SEU cross sections derived from a diffusion analysis
  IEEE Transactions on Nuclear Science, 1996
• Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation
  IEEE Transactions on Nuclear Science, 1995
• Application of a diffusion model to SEE cross sections of modern devices [DRAMs]
  IEEE Transactions on Nuclear Science, 1995
• SEE results using high energy ions
  IEEE Transactions on Nuclear Science, 1995
• Space radiation evaluation of 16 Mbit DRAMs for mass memory applications
  IEEE Transactions on Nuclear Science, 1994
• SEE in-flight measurement on the MIR orbital station
  IEEE Transactions on Nuclear Science, 1994
• The latchup risk of CMOS-technology in space
  IEEE Transactions on Nuclear Science, 1993
• Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs)
  IEEE Transactions on Nuclear Science, 1993