Thin-film transistors incorporating a thin, high-quality PECVD SiO/sub 2/ gate dielectric
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11) , 576-578
- https://doi.org/10.1109/55.9281
Abstract
Thin-film transistors (TFTs) have been made that incorporate a thin ( approximately 380 AA), high-quality plasma-enhanced chemical vapor deposition (PECVD) SiO/sub 2/ film as the gate dielectric in a staggered-inverted structure. Threshold voltages and mobilities have been found to be in the range of 1.6-2.4 V and 0.20-0.25 cm/sup 2/ V/sup -1/ s/sup -1/, respectively, where the exact values are dependent on the measurement technique used. Very low gate leakage currents (Keywords
This publication has 10 references indexed in Scilit:
- IIIB-5 Fabrication of thin gate Oxide MOSFET's using low-temperature plasma-enhanced chemical-vapor-deposited SiO2IEEE Transactions on Electron Devices, 1987
- Electrical characteristics of very thin SiO2deposited at low substrate temperaturesIEEE Electron Device Letters, 1987
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Interfacial problems in preparing a-Si:H FETsIEE Proceedings I Solid State and Electron Devices, 1986
- Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS TransistorsJapanese Journal of Applied Physics, 1985
- Above threshold characteristics of amorphous silicon alloy thin-film transistorsApplied Physics Letters, 1984
- Theoretical Analysis of Amorphous-Silicon Field-Effect-TransistorsJapanese Journal of Applied Physics, 1983
- Thin-film transistors on a-Si:HIEEE Transactions on Electron Devices, 1982
- High-performance amorphous-silicon field-effect transistorsJournal of Applied Physics, 1980
- Amorphous-silicon thin-film metal-oxide-semiconductor transistorsApplied Physics Letters, 1980