Heteroepitaxial growth of GaAs on sapphire substrates by a three-step method using low pressure MOCVD
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 524-529
- https://doi.org/10.1016/0022-0248(86)90347-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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