Photoluminescent properties of p-GaAs electrodes related to the ‘‘photocurrent anomaly’’: Determination of surface electron-capture velocities and depletion widths in photoelectrochemical cells
- 15 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (12) , 4903-4908
- https://doi.org/10.1063/1.338998
Abstract
Steady‐state photoluminescence (PL) measurements have been used to determine depletion widths W and surface electron‐capture velocities S for p‐GaAs electrodes in aqueous acidic electrolytes. Electrodes subjected to slow cycling of applied potential (10 mV/s) exhibit a hysteresis in PL intensity in the ‘‘photocurrent anomaly’’ (PA) potential regime, characterized by negligible photocurrent at voltages up to ∼0.5 V negative of the flat‐band potential (∼0.1 V versus a saturated calomel reference electrode, SCE). A marked hysteresis in S values is observed in the PA potential regime of ∼−0.1 to −0.4 V vs SCE. Estimated S values are high, approaching 107 cm/s, but decrease significantly during anodic‐going scans. Variations in W between −0.1 and −0.8 V vs SCE indicate that strong Fermi‐level pinning does not obtain. Electrode operation under a pulsed potential program (−0.05 to −1.00 V vs SCE) caused a transient reduction in S of approximately an order of magnitude.This publication has 28 references indexed in Scilit:
- Photoluminescent Properties of p-GaAs/Electrolyte Interface. Evidence for Bandedge Shift during Photoelectrochemical Hydrogen Evolution ReactionChemistry Letters, 1986
- Stabilization and luminescent properties of GaP/GaAs0.4P0.6 strained-layer superlattice electrodesApplied Physics Letters, 1985
- Bias-dependent photoluminescence of InP in aqueous iodine solutionsApplied Physics Letters, 1985
- Time-resolved photoluminescence in the picosecond time domain from cadmium sulfide crystals immersed in electrolytesThe Journal of Physical Chemistry, 1984
- Photoluminescent and electroluminescent properties of GaAs1−xPx-GaAs1−yPy isotype heterojunction electrodesApplied Physics Letters, 1984
- Electric field modulation of photoluminescence in cadmium selenide liquid junction solar cellsJournal of Applied Physics, 1983
- Photoluminescent properties of n-GaAs electrodes: Applications of the dead-layer model to photoelectrochemical cellsJournal of Applied Physics, 1983
- Photoluminescence dead layer in p-type InPJournal of Applied Physics, 1982
- Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenideApplied Physics A, 1977
- Photoexcitation and Luminescence in Redox Processes on Gallium Phosphide ElectrodesJournal of the Electrochemical Society, 1969