Peculiarities of step bunching on Si(001) surface induced by DC heating
- 1 June 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 130-132, 139-145
- https://doi.org/10.1016/s0169-4332(98)00040-3
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Control of Si(100) Sublimation with DopantsPhysical Review Letters, 1997
- Size Scaling in the Decay of Metastable StructuresPhysical Review Letters, 1996
- Studies of surface stress by reflection electron microscopy and transmission electron microscopySurface Science, 1996
- An STM study of current-induced step bunching on Si(111)Surface Science, 1996
- REM study of high index Si(5 5 12) flat surfacesSurface Science, 1996
- Current Induced Faceting in Theory and SimulationJournal de Physique I, 1996
- UHV REM study of the anti-band structure on the vicinal Si(111) surface under heating by a direct electric currentSurface Science, 1994
- Wavy steps on Si(001)Physical Review Letters, 1992
- Atomic steps on Si{100} and step dynamics during sublimation studied by low-energy electron microscopySurface Science, 1989
- REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2×1 and 1×2 Induced by Specimen Heating CurrentJapanese Journal of Applied Physics, 1989