On the correlation of paramagnetic properties and electronic structure of (111) Si surfaces baked at low temperature in high vacuum
- 16 August 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 66 (2) , K141-K144
- https://doi.org/10.1002/pssa.2210660262
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- The electronic structure of semiconductor surfacesPublished by Springer Nature ,2007
- Electron spin resonance study on low-pressure-baked (111) Si surfaces interacting with adsorbed gasesPhysica Status Solidi (a), 1979
- Dominant interactions and average distances between surface paramagnetic centers on low pressure baked (111) Si surfacePhysica Status Solidi (a), 1979
- Electron spin resonance study on low-pressure-baked silicon surfacesPhysica Status Solidi (a), 1979
- Model of structural transformations on the chemically etched silicon surface during thermal oxidationPhysica Status Solidi (a), 1978
- High-resolution photoemission yield and surface states in semiconductorsIl Nuovo Cimento B (1971-1996), 1977
- On the correlation of geometrical structure and electronic properties at clean semiconductor surfacesSurface Science, 1977
- Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surfacePhysical Review B, 1975
- Oxide Growth on Etched Silicon in Air at Room TemperatureJournal of the Electrochemical Society, 1975
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962