Electrically active, ion implanted boron at the solubility limit in silicon
- 23 August 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (8) , 1134-1136
- https://doi.org/10.1063/1.109803
Abstract
For 30 keV B implants in Si, doses above 1.5×1014 B/cm2 will lead to dislocation formation during a subsequent 900 °C anneal to make the B electrically active. Although dislocations are avoided for doses <1.5×1014 B/cm2, the B concentration is only ∼1×1019 B/cm3, a factor of 4–5 lower than the solid solubility of B in Si at 900 °C. Using multiple implant/anneal steps, we demonstrate here that implanted, electrically active B can be introduced up to the solid solubility limit while avoiding dislocation formation.Keywords
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