50-nm channel nMOSFET/SIMOX with an ultrathin 2- or 6-nm thick silicon layer and their significant features of operations
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (5) , 190-193
- https://doi.org/10.1109/55.568758
Abstract
This paper demonstrates mesoscopic scale nMOSFET's fabricated by Separation by IMplanted OXygen (SIMOX) technology on a trial basis and describes their explicit quantum-mechanical transport phenomena: enhanced threshold voltage in an extremely thin silicon-on-insulator (SOI) structure and enhanced short-channel effect at room temperature as well as a weak interference (WI) effect at relatively high temperatures (/spl sim/40 K), which are characterized specifically in extremely thin SOI short-channel devices.Keywords
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