Profile Evolution during Pulsed Plasma Etching
- 1 October 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (10B) , L1374-1377
- https://doi.org/10.1143/jjap.35.l1374
Abstract
Evolution of etched profiles has been studied numerically during pulsed low-pressure, high-density plasma etching of Si in Cl2. The time-dependent behavior of chlorinated surface coverage and etch rate was calculated assuming Langmuir adsorption kinetics. Etched profiles were then simulated using the time-averaged etch rates obtained, to examine etch anisotropy and microscopic uniformity. The model predicted that under pulsed plasma conditions, the surface coverage is increased at the bottom of microstructures, resulting in highly anisotropic, aspect-ratio independent etching.Keywords
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