Diffusion Behavior of Point Defects in Si Crystal during Melt Growth IV: Numerical Analysis
- 1 March 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (3R)
- https://doi.org/10.1143/jjap.33.1234
Abstract
This paper describes a numerical analysis technique for the solution of the phenomenological diffusion equations of point defects in silicon single crystals during melt growth. The calculation, which assumes an entropy barrier against the pair annihilation reaction between point defects (self-interstitials and vacancies), gives a distribution of point defects which closely agrees with the distribution of grown-in crystal defects observed in CZ-crystals.Keywords
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