Interaction of hydrogen and thermal donor defects in silicon
- 2 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (9) , 513-515
- https://doi.org/10.1063/1.98144
Abstract
We have studied the interaction of hydrogen with thermal donors in silicon using transient capacitance and current spectroscopy. We find that a large degree of thermal donor passivation (a factor of 40) can be achieved by hydrogen plasma exposure at 120 °C. The residual electrical activity is shown to arise from perturbed E(0.07) and E(0.15) donor states. Annealing at 200 °C almost completely reactivates the low concentration of thermal donors present in these samples. A model involving different incorporation sites for hydrogen is proposed to explain the results.Keywords
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