Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures
- 14 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (20) , 2022-2024
- https://doi.org/10.1063/1.103005
Abstract
Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle‐induced x‐ray emission as a function of growth temperature. Test structures for modulation‐doped field‐effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low‐temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As4 flux on the cation surface mobility during growth of the InGaAs layer.Keywords
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