Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers
- 1 March 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (5) , 301-303
- https://doi.org/10.1063/1.92366
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasersJournal of Applied Physics, 1980
- Prevention of InP surface decomposition in liquid phase epitaxial growthApplied Physics Letters, 1980
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- GaInAsP/InP double-heterostructure lasers for fiber odtic communicationsFiber and Integrated Optics, 1978
- Low-threshold room-temperature embedded heterostructure lasersApplied Physics Letters, 1976
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976
- Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1975