Role of Extended Vacancy-Vacancy Interaction on the Ripening of Voids in Silicon
- 22 February 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 82 (8) , 1720-1723
- https://doi.org/10.1103/physrevlett.82.1720
Abstract
We elucidate the mechanism driving the ripening of vacancy clusters in silicon by means of lattice kinetic Monte Carlo simulations using different binding models. A modified Ising model, also taking into account second neighbor interaction, results in vacancy cluster energetics, in quantitative agreement with recent tight binding molecular dynamics calculations. We show that, when this model is used, the ripening process is also driven by the migration of small vacancy clusters, and not solely by free vacancies. This produces a faster vacancy agglomeration and a strong modification of the cluster size distribution.This publication has 18 references indexed in Scilit:
- Structural and binding properties of vacancy clusters in siliconEurophysics Letters, 1998
- Interaction between a monovacancy and a vacancy cluster in siliconPhysical Review B, 1998
- Radiation damage and implanted He atom interaction during void formation in siliconApplied Physics Letters, 1997
- Self-Interstitial Clustering in Crystalline SiliconPhysical Review Letters, 1997
- The ring-hexavacany in silicon: A stable and inactive defectApplied Physics Letters, 1997
- Observation of low-lying resonance states of at the S and S He thresholdsPhysical Review A, 1997
- Binding of cobalt and iron to cavities in siliconJournal of Applied Physics, 1996
- Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomenaApplied Physics Letters, 1996
- Diffusion and interactions of point defects in silicon: molecular dynamics simulationsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984