Low temperature identification of interfacial and bulk defects in Al/SiO/sub 2//Si capacitor structures by electron beam induced current
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (6) , 959-963
- https://doi.org/10.1109/16.293308
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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